MAS3795EGL Panasonic - SSG, MAS3795EGL Datasheet

DIODE SCHOTTKY 30V 20MA SSSMINI

MAS3795EGL

Manufacturer Part Number
MAS3795EGL
Description
DIODE SCHOTTKY 30V 20MA SSSMINI
Manufacturer
Panasonic - SSG
Datasheet

Specifications of MAS3795EGL

Voltage - Forward (vf) (max) @ If
1V @ 30mA
Current - Reverse Leakage @ Vr
30µA @ 30V
Current - Average Rectified (io) (per Diode)
30mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
1ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SSS Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MAS3795EGLTR
Schottky Barrier Diodes (SBD)
MAS3795EG
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: November 2007
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
• Forward voltage V
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Detection efficiency
reverse recovery time (t
< 0.3 V (at I
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
F
= 1 mA)
F
Single
Double
Single
Double
*
optimum for low voltage rectification V
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
Pulse Generator
(PG-10N)
R
)
s
= 50 Ω
Symbol
Bias Application Unit N-50BU
V
T
I
V
T
I
FM
RM
stg
F
R
j
a
A
Symbol
= 25°C ± 3°C
V
V
C
I
t
η
a
R
rr
F1
F2
t
= 25°C
Wave Form Analyzer
(SAS-8130)
R
−55 to +125
i
= 50 Ω
Rating
150
110
125
30
30
30
20
I
I
V
V
I
I
V
R
F
F
F
rr
R
R
IN
L
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00219AED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
Conditions
L
F
= 100 Ω
V
, f = 30 MHz
L
R
=
= 10 pF
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
■ Package
■ Marking Symbol: M3
■ Internal Connection
• Code
• Pin Name
SSSMini3-F2
1: Anode 1
2: Anode 2
3: Cathode 1, 2
t
I
F
I
I
R
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
Min
t
I
rr
rr
1
= 1 mA
t
3
Typ
1.5
1.0
65
2
Max
0.3
1.0
30
Unit
µA
pF
ns
%
V
1

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