MBRF30H60CTG ON Semiconductor, MBRF30H60CTG Datasheet - Page 2

• Manufacturer Part Number: MBRF30H60CTG
• Description: DIODE SCHOTTKY 60V 15A TO220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRF30H60CTG

• Voltage - Forward (vf) (max) @ If: 620mV @ 15A
• Current - Reverse Leakage @ Vr: 300µA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Switching Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 15 A
• Max Surge Current: 260 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.62 V
• Maximum Reverse Leakage Current: 300 uA
• Operating Temperature Range: - 55 C to + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRF30H60CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Maximum Thermal Resistance
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(MBRB30H60CT−1G and MBR30H60CTG) − Junction−to−Case
(MBRF30H60CTG)
(MBRB30H60CTTRG)
(I
(I
(I
(I
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
= 15 A, T
= 15 A, T
= 30 A, T
= 30 A, T
R
R
) T
, Square Wave, 20 kHz)
C
C
C
C
C
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 159°C
(Per Diode Leg)
C
C
= 25°C)
= 125°C)
R
)
(Per Diode Leg)
Rating
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Case
http://onsemi.com
2
Symbol
D
W
V
V
I
/dT
dv/dt
R
R
R
I
R
I
F(AV)
T
FRM
FSM
RWM
RRM
V
T
AVAL
v
qJC
qJC
qJC
i
stg
qJA
R
F
R
J
J
< 1/R
qJA
*55 to +175
.
−55 to +175
10,000
> 8000
Value
> 400
0.62
0.56
0.78
0.71
260
350
2.0
4.4
1.6
0.3
60
15
30
70
45
°C/W
Unit
V/ms
mA
mJ
°C
°C
V
A
A
A
V
V