MBR16100CTG ON Semiconductor, MBR16100CTG Datasheet - Page 2
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MBR16100CTG
Manufacturer Part Number
MBR16100CTG
Description
DIODE SCHOTTKY 100V 8A TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MBR16100CTG.pdf
(5 pages)
Specifications of MBR16100CTG
Voltage - Forward (vf) (max) @ If
740mV @ 8A
Current - Reverse Leakage @ Vr
100µA @ 100V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
MBR16100CTGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR16100CTG
Manufacturer:
ON Semiconductor
Quantity:
2 750
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance,
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(T
(Square Wave, 20 kHz)
T
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
C
F
F
F
F
C
= 8.0 A, T
= 8.0 A, T
= 16 A, T
= 16 A, T
= 165°C
= 166°C)
J
J
J
J
= 125°C)
= 25°C)
= 125°C)
= 25°C)
Per Diode
Per Device
(Per Diode Leg)
J
J
= 125°C)
= 25°C)
R
Characteristic
Characteristic
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
)
Rating
(Per Diode Leg)
http://onsemi.com
2
Symbol
Symbol
Symbol
V
V
I
I
dv/dt
R
I
I
R
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
v
i
qJC
qJA
stg
R
R
F
J
D
/dT
J
< 1/R
Min
−
−
−
−
−
−
qJA
*65 to +175
*65 to +175
.
Typical
10,000
0.0013
Value
Value
0.56
0.68
0.67
0.79
0.95
100
150
8.0
0.5
2.0
16
16
60
Max
0.60
0.74
0.69
0.84
5.0
0.1
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
V
A
A
A
A
V