MBR16100CTG ON Semiconductor, MBR16100CTG Datasheet - Page 2

• Manufacturer Part Number: MBR16100CTG
• Description: DIODE SCHOTTKY 100V 8A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR16100CTG

• Voltage - Forward (vf) (max) @ If: 740mV @ 8A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: MBR16100CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance,
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(T
(Square Wave, 20 kHz)
T
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
C
F
F
F
F
C
= 8.0 A, T
= 8.0 A, T
= 16 A, T
= 16 A, T
= 165°C
= 166°C)
J
J
J
J
= 125°C)
= 25°C)
= 125°C)
= 25°C)
Per Diode
Per Device
(Per Diode Leg)
J
J
= 125°C)
= 25°C)
R
Characteristic
Characteristic
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
)
Rating
(Per Diode Leg)
http://onsemi.com
2
Symbol
Symbol
Symbol
V
V
I
I
dv/dt
R
I
I
R
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
v
i
qJC
qJA
stg
R
R
F
J
D
/dT
J
< 1/R
Min
−
−
−
−
−
−
qJA
*65 to +175
*65 to +175
.
Typical
10,000
0.0013
Value
Value
0.56
0.68
0.67
0.79
0.95
100
150
8.0
0.5
2.0
16
16
60
Max
0.60
0.74
0.69
0.84
5.0
0.1
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
V
A
A
A
A
V