MBRB2535CTLT4G ON Semiconductor, MBRB2535CTLT4G Datasheet - Page 3

• Manufacturer Part Number: MBRB2535CTLT4G
• Description: DIODE SCHOTTKY 35V 12.5A D2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB2535CTLT4G

• Voltage - Forward (vf) (max) @ If: 470mV @ 12.5A
• Current - Reverse Leakage @ Vr: 10mA @ 35V
• Current - Average Rectified (io) (per Diode): 12.5A
• Voltage - Dc Reverse (vr) (max): 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 12.5 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.55 V @ 25 A
• Maximum Reverse Leakage Current: 10000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRB2535CTLT4GOSTR

0.5
0.2
0.1
50
20
10
40
35
30
25
20
15
10
5
2
1
5
0
0
0
Figure 3. Typical Forward Power Dissipation
T
J
0.1
Figure 1. Typical Forward Voltage, Per Leg
= 125°C
5
I
0.2
F(AV)
T
v
J
F
10
, AVERAGE FORWARD CURRENT (AMPS)
, INSTANTANEOUS VOLTAGE (VOLTS)
= 125°C
(RESISTIVE LOAD)
0.3
SINE WAVE
T
J
15
= 25°C
0.4
0.5
20
0.6
25
0.7
30
0.8
DC
http://onsemi.com
MBRB2535CTL
SQUARE
WAVE
35
0.9
10
40
3
1000
100
0.1
10
32
28
24
20
16
12
1
8
4
0
0
85
Figure 2. Typical Reverse Current, Per Leg
5
Figure 4. Current Derating, Case
95
T
V
10
J
R
T
= 25°C
, REVERSE VOLTAGE (VOLTS)
C
, CASE TEMPERATURE (°C)
15
SQUARE
T
J
= 100°C
105
20
T
DC
J
(RATED V
R
= 125°C
qJC
25
115
= 2°C/W
r
APPLIED)
30
125
35