UH4PCC-M3/87A Vishay, UH4PCC-M3/87A Datasheet - Page 3

• Manufacturer Part Number: UH4PCC-M3/87A
• Description: DIODE 4A 150V 25NS DUAL TO277A
• Manufacturer: Vishay

Specifications of UH4PCC-M3/87A

• Voltage - Forward (vf) (max) @ If: 1.05V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Current - Average Rectified (io) (per Diode): 2A
• Voltage - Dc Reverse (vr) (max): 150V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 150 V
• Forward Voltage Drop: 1.05 V at 2 A
• Recovery Time: 25 ns
• Forward Continuous Current: 4 A
• Max Surge Current: 40 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88991
Revision: 19-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
A
= 25 C unless otherwise noted)
Fig. 2 - Forward Power Loss Characteristics Per Diode
0.01
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
Fig. 1 - Maximum Forward Current Derating Curve
4
3
0
5
2
0
1
1
0.2
0
0
T
T
at the Cathode Band Terminal
0.4
A
L
25
0.4
= 125 °C
measured
Instantaneous Forward Voltage (V)
D = 0.1
Average Forward Current (A)
0.6
50
Lead Temperature (°C)
T
0.4
D = 0.2
A
Resistive or Inductive Load
0.8
= 150 °C
75
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D = 0.3
For technical questions within your region, please contact one of the following:
1.2
1.0
T
A
100
D = 0.5
= 25 °C
D = t
1.2
1.6
p
125
/T
1.4
D = 0.8
T
2.0
t
150
p
This document is subject to change without notice.
1.6
D = 1.0
175
2.4
1.8
New Product
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
0.001
UH4PBC, UH4PCC, UH4PCD
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0.01
100
100
100
0.1
10
10
10
1
1
0.01
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
10
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
20
30
0.1
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
40
= 150 °C
1
T
A
50
= 125 °C
T
A
1
= 25 °C
60
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70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
80
= 50 mVp-p
90
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100
100
100
3