SS10P2CL-M3/86A Vishay, SS10P2CL-M3/86A Datasheet - Page 3

DIODE SCHOTTKY 10A 20V SMPC

SS10P2CL-M3/86A

Manufacturer Part Number
SS10P2CL-M3/86A
Description
DIODE SCHOTTKY 10A 20V SMPC
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of SS10P2CL-M3/86A

Voltage - Forward (vf) (max) @ If
520mV @ 5A
Current - Reverse Leakage @ Vr
850µA @ 20V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
TO-277A (SMPC)
Product
Schottky Rectifiers
Peak Reverse Voltage
20 V
Forward Continuous Current
10 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.44 V
Maximum Reverse Leakage Current
37 mA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SS10P2CL-M3/86A
Manufacturer:
Vishay Semiconductors
Quantity:
1 840
RATINGS AND CHARACTERISTICS CURVES
Document Number: 89036
Revision: 24-Nov-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
(T
A
Figure 2. Forward Power Loss Characteristics Per Diode
= 25 °C unless otherwise noted)
0.01
100
2.4
2.0
1.6
1.2
0.8
0.4
0.1
12
10
Figure 1. Maximum Forward Current Derating Curve
10
8
6
4
2
0
0
1
0
0
0
T
0.1
T
at the Cathode Band Terminal
A
L
25
= 125 °C
measured
1
Instantaneous Forward Voltage (V)
D = 0.1
0.2
Average Forward Current (A)
50
T
Lead Temperature (°C)
A
0.3
D = 0.2
= 150 °C
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
75
Resistive or Inductive Load
0.4
D = 0.3 D = 0.5
For technical questions within your region, please contact one of the following:
3
0.5
100
T
A
= 25 °C
D = t
0.6
4
125
p
/T
0.7
D = 0.8
150
5
T
D = 1.0
t
p
0.8
175
0.9
6
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
1000
1000
0.01
100
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.1
0.01
10
DiodesEurope@vishay.com
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
T
20
A
= 150 °C
SS10P2CL, SS10P3CL
30
0.1
T
t - Pulse Duration (s)
Reverse Voltage (V)
1
A
40
= 125 °C
T
A
50
= 25 °C
1
60
Junction to Ambient
10
70
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
80
90
www.vishay.com
100
100
100
3

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