BYT28-400-E3/45 Vishay, BYT28-400-E3/45 Datasheet - Page 3

DIODE DUAL 10A 400V TO-220AB

BYT28-400-E3/45

Manufacturer Part Number
BYT28-400-E3/45
Description
DIODE DUAL 10A 400V TO-220AB
Manufacturer
Vishay
Datasheets

Specifications of BYT28-400-E3/45

Voltage - Forward (vf) (max) @ If
1.3V @ 5A
Current - Reverse Leakage @ Vr
10µA @ 400V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
400 V
Forward Voltage Drop
1.4 V
Recovery Time
50 ns
Forward Continuous Current
10 A
Max Surge Current
60 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88552
Revision: 06-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
100
0.01
100
15
10
1.0
10
0.1
10
5
0
1
0.2
0
1
Figure 1. Forward Current Derating Curve
T
Pulse Width = 300 µs
1 % Duty Cycle
J
Resistive or Inductive Load
= 125 °C
0.4
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
0.6
Case Temperature (°C)
Current Per Diode
50
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
0.8
T
J
T
8.3 ms Single Half Sine-Wave
= 25 °C
C
= 105 °C
10
1.0
T
J
= 100 °C
1.2
100
1.4
1.6
150
100
1.8
1000
100
Figure 5. Reverse Switching Characteristics Per Diode
100
120
100
1.0
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
80
60
40
20
1
0
Figure 6. Typical Junction Capacitance Per Diode
0.1
20
25
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
at 2 A, 20 A/µs
40
50
Junction Temperature (°C)
Reverse Voltage (V)
at 1 A, 100 A/µs
1
at 2 A, 20 A/µs
60
75
at 5 A, 50 A/µs
T
T
T
J
J
J
= 125 °C
= 100 °C
= 25 °C
10
T
f = 1.0 MHz
V
at 5 A, 50 A/µs
J
sig
= 125 °C
100
80
= 50 mVp-p
www.vishay.com
t
Q
rr
rr
100
100
125
3

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