BYT28-400HE3/45 Vishay, BYT28-400HE3/45 Datasheet - Page 3

• Manufacturer Part Number: BYT28-400HE3/45
• Description: DIODE DUAL 10A 400V TO-220AB
• Manufacturer: Vishay

Specifications of BYT28-400HE3/45

• Voltage - Forward (vf) (max) @ If: 1.3V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.4 V
• Recovery Time: 50 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 60 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88552
Revision: 06-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
100
100
1.0
0.1
15
10
10
10
5
0
1
0.2
1
0
Figure 1. Forward Current Derating Curve
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 125 °C
0.4
Resistive or Inductive Load
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Case Temperature (°C)
Current Per Diode
50
0.8
T
J
T
8.3 ms Single Half Sine-Wave
= 25 °C
[e-mail], [e-mail], [e-mail]
C
For technical questions within your region, please contact one of the following:
1.0
= 105 °C
10
T
J
= 100 °C
1.2
100
1.4
1.6
150
100
1.8
1000
Figure 5. Reverse Switching Characteristics Per Diode
100
120
100
100
1.0
0.1
10
80
60
40
20
Figure 4. Typical Reverse Characteristics Per Diode
10
0
1
Figure 6. Typical Junction Capacitance Per Diode
0.1
25
20
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
at 2 A, 20 A/µs
40
50
Junction Temperature (°C)
Reverse Voltage (V)
at 1 A, 100 A/µs
1
at 2 A, 20 A/µs
60
75
at 5 A, 50 A/µs
T
T
T
J
J
J
= 125 °C
= 100 °C
= 25 °C
10
at 5 A, 50 A/µs
T
f = 1.0 MHz
V
J
sig
100
80
= 125 °C
= 50 mVp-p
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t
Q
rr
rr
100
125
100
3