MBR2535CT-E3/45 Vishay, MBR2535CT-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR2535CT-E3/45
• Description: DIODE SCHOT 25A 35V DUAL TO220-3
• Manufacturer: Vishay

Specifications of MBR2535CT-E3/45

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 820mV @ 30A
• Current - Reverse Leakage @ Vr: 200µA @ 35V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 35V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 30 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.82 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 35V
• Forward Current If(av): 15A
• Forward Voltage Vf Max: 730mV
• Forward Surge Current Ifsm Max: 150A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88675
Revision: 15-Jun-10
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
0.01
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
150
125
100
100
1.0
0.1
30
24
18
12
75
50
25
10
6
0
0
0
1
0
Fig. 1 - Forward Current Derating Curve
0.1
T
J
= 150 °C
Instantaneous Forward Voltage (V)
0.2
Resistive or Inductive Load
Number of Cycles at 60 Hz
Case Temperature (°C)
0.3
Current Per Diode
50
0.4
[e-mail], [e-mail],
T
8.3 ms Single Half Sine-Wave
J
For technical questions within your region, please contact one of the following:
MBR2550CT & MBR2560CT
0.5
= T
MBR2535CT - MBR2545CT
10
T
J
J
= 25 °C
Max.
0.6
Pulse Width = 300 µs
1 % Duty Cycle
100
0.7
0.8
0.9
150
100
1.0
MBR(F,B)2535CT thru MBR(F,B)2560CT
10 000
0.001
1000
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0.01
100
100
100
0.1
0.1
10
10
1
Fig. 4 - Typical Reverse Characteristics Per Diode
1
0.01
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
0
[e-mail]
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
MBR2550CT & MBR2560CT
MBR2535CT - MBR2545CT
20
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0.1
T
J
= 125 °C
t - Pulse Duration (s)
Reverse Voltage (V)
1
T
40
J
= 75 °C
1
60
T
10
J
= 25 °C
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
100
3