MBRB15H60CT-E3/45 Vishay, MBRB15H60CT-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBRB15H60CT-E3/45
• Description: DIODE SCHOTTKY 15A 60V DUAL
• Manufacturer: Vishay

Specifications of MBRB15H60CT-E3/45

• Voltage - Forward (vf) (max) @ If: 730mV @ 7.5A
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Current - Average Rectified (io) (per Diode): 7.5A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 15 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.87 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88782
Revision: 19-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
0.01
175
150
125
100
100
20
15
10
0.1
75
50
25
10
5
0
1
0
1
0
Figure 1. Forward Derating Curve Per Diode
T
J
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
= 150 °C
25
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
Per Diode
75
T
8.3 ms Single Half Sine-Wave
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
[e-mail], [e-mail], [e-mail]
J
T
For technical questions within your region, please contact one of the following:
= T
10
J
= 125 °C
J
100
max.
T
J
= 25 °C
MBRF
125
MBR, MBRB
150
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
175
100
0.0001
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
1000
0.01
100
0.1
10
10
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0
T
f = 1.0 MHz
V
Vishay General Semiconductor
J
sig
T
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
J
= 50 mVp-p
= 150 °C
T
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
J
20
= 25 °C
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
T
J
= 125 °C
60
10
1
80
www.vishay.com
100
100
10
3