BYVF32-100-E3/45 Vishay, BYVF32-100-E3/45 Datasheet - Page 3
![DIODE UFAST 18A 100V ITO-220AB](/photos/18/27/182797/aot3n50_sml.jpg)
BYVF32-100-E3/45
Manufacturer Part Number
BYVF32-100-E3/45
Description
DIODE UFAST 18A 100V ITO-220AB
Manufacturer
Vishay
Specifications of BYVF32-100-E3/45
Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
10µA @ 100V
Current - Average Rectified (io) (per Diode)
18A
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
100 V
Forward Voltage Drop
1.15 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
18 A
Max Surge Current
150 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88558
Revision: 07-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
150
125
100
0.01
100
20
18
16
75
50
25
12
0.1
10
0
0
8
4
1
0.1
1
0
Figure 1. Forward Current Derating Curve
25
0.3
Instantaneous Forward Voltage (V)
Case Ambient Temperature (°C)
Number of Cycles at 50 Hz
Current Per Diode
50
0.5
T
J
= 125 °C
T
10 ms Single Half Sine-Wave
Resistive or Inductive Load
J
10
75
0.7
= 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
100
= 25 °C
0.9
125
1.1
100
150
1.3
BYV(F,B)32-50 thru BYV(F,B)32-200
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
100
0.1
60
50
40
30
20
10
10
0
Figure 5. Typical Junction Capacitance Per Diode
1
1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
C
Reverse Voltage (V)
= 100 °C
T
C
40
= 25 °C
10
60
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 5 mVp-p
80
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100
100
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