MBR30H100CT-E3/45 Vishay, MBR30H100CT-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR30H100CT-E3/45
• Description: DIODE SCHOTTKY 30A 100V DUAL
• Manufacturer: Vishay

Specifications of MBR30H100CT-E3/45

• Voltage - Forward (vf) (max) @ If: 760mV @ 30A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 275 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88791
Revision: 19-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
20
0
Percent of Rated Peak Reverse Voltage (%)
0.1
T
J
T
= 150 °C
Instantaneous Forward Voltage (V)
0.2
J
= 175 °C
40
T
J
0.3
= 150 °C
T
J
= 175 °C
0.4
T
J
= 125 °C
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T
T
J
0.5
For technical questions within your region, please contact one of the following:
60
J
= 100 °C
= 25 °C
T
J
0.6
= 100 °C
T
J
T
0.7
J
= 125 °C
= 25 °C
80
0.8
0.9
100
1.0
MBR(F,B)30H90CT & MBR(F,B)30H100CT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
10
1
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100
10
3