BAV74,235 NXP Semiconductors, BAV74,235 Datasheet

DIODE DUAL 50V 215MA H-S SOT-23

BAV74,235

Manufacturer Part Number
BAV74,235
Description
DIODE DUAL 50V 215MA H-S SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV74,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
50V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1 V @ 0.1 A
Maximum Reverse Leakage Current
0.1 uA @ 50 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933700010235
BAV74 /T3
BAV74 /T3
Product data sheet
Supersedes data of 1999 May 11
dbook, halfpage
DATA SHEET
BAV74
High-speed double diode
DISCRETE SEMICONDUCTORS
M3D088
2004 Jan 14

Related parts for BAV74,235

BAV74,235 Summary of contents

Page 1

DATA SHEET dbook, halfpage BAV74 High-speed double diode Product data sheet Supersedes data of 1999 May 11 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 14 ...

Page 2

... NXP Semiconductors High-speed double diode FEATURES • Small plastic SMD package • High switching speed: max • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching in thick and thin-film circuits. ...

Page 3

... NXP Semiconductors High-speed double diode ORDERING INFORMATION TYPE NUMBER NAME − BAV74 ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL ...

Page 4

... NXP Semiconductors High-speed double diode GRAPHICAL DATA 300 I F (mA) 200 single diode loaded double diode loaded 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − Based on square wave currents. ...

Page 5

... NXP Semiconductors High-speed double diode 5 10 handbook, halfpage I R (nA (1) ( 100 ( maximum values typical values typical values. R Fig.5 Reverse current as a function of junction temperature. 2004 Jan 14 MBG376 handbook, halfpage (3) o 200 0 (pF) 0.6 0.4 0 ° MHz Fig.6 Diode capacitance as a function of reverse voltage ...

Page 6

... NXP Semiconductors High-speed double diode handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery voltage test circuit and waveforms. I Ω Ω 450 Ω D.U.T. Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Jan 10% SAMPLING OSCILLOSCOPE Ω MGA881 I 90% OSCILLOSCOPE Ω ...

Page 7

... NXP Semiconductors High-speed double diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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