BAV23,235 NXP Semiconductors, BAV23,235 Datasheet - Page 10

• Manufacturer Part Number: BAV23,235
• Description: DIODE G-P DUAL 200V 225MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BAV23,235

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 225mA (DC)
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.225 A
• Max Surge Current: 9 A
• Configuration: Dual Parallel
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933720770235; BAV23 /T3; BAV23 /T3

NXP Semiconductors
12. Revision history
Table 10.
BAV23_SER_7
Product data sheet
Document ID
BAV23_SER_7
Modifications:
BAV23_SER_6
BAV23S_5
BAV23_2
Revision history
20100319
20080303
19960917
Release date
20011012
•
•
•
•
•
•
Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted
Type numbers BAV23A and BAV23C added
Table 5 “Marking
Figure
Figure
Section 13 “Legal
6: adaptation of test condition to specified characteristics in
9, 10,
All information provided in this document is subject to legal disclaimers.
11
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
and 12: updated
codes”: updated
Rev. 07 — 19 March 2010
information”: updated
Change notice
-
-
-
-
Dual high-voltage switching diodes
BAV23 series
Supersedes
BAV23_SER_6
BAV23S_5
BAV23_2
BAV23S_4
BAV23_1
Table 8
© NXP B.V. 2010. All rights reserved.
10 of 13