BAV70LT3G ON Semiconductor, BAV70LT3G Datasheet - Page 2
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BAV70LT3G
Manufacturer Part Number
BAV70LT3G
Description
DIODE SWITCH DUAL CC 70V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.BAV70LT3G.pdf
(4 pages)
Specifications of BAV70LT3G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Common Cathode
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
2.5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV70LT3G
Manufacturer:
ON Semiconductor
Quantity:
5 250
Company:
Part Number:
BAV70LT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV70LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
3. For each individual diode while second diode is unbiased.
+10 V
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current (Note 3)
Diode Capacitance
Forward Voltage
Reverse Recovery Time
50 W OUTPUT
(I
GENERATOR
F
PULSE
= I
820 W
R
= 10 mA, I
0.1 mF
2.0 k
100 mH
R(REC)
= 1.0 mA) (Figure 1)
I
F
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
Characteristic
D.U.T.
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted) (Each Diode)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
(I
(V
(V
(V
(V
(I
(I
(I
(I
R
(BR)
F
F
F
F
L
R
R
R
R
= 1.0 mA)
= 10 mA)
= 50 mA)
= 150 mA)
= 100 W
http://onsemi.com
= 25 V, T
= 70 V)
= 70 V, T
= 0 V, f = 1.0 MHz)
= 100 mA)
R(peak)
is equal to 10 mA.
J
J
V
2
R
= 150°C)
= 150°C)
t
r
INPUT SIGNAL
10%
90%
t
p
F
Symbol
) of 10 mA.
V
t
C
V
(BR)
I
t
R
rr
D
F
I
I
R
F
Min
70
−
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
1000
1250
Max
100
715
855
2.5
1.5
6.0
60
i
−
R(REC)
= 1.0 mA)
= 1.0 mA
t
Unit
mV
mA
pF
ns
V