BAV70LT1G ON Semiconductor, BAV70LT1G Datasheet
BAV70LT1G
Manufacturer Part Number
BAV70LT1G
Description
DIODE SWITCH DUAL CC 70V SOT23
Manufacturer
ON Semiconductor
Specifications of BAV70LT1G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Common Cathode
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
2.5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
1.5 pF
Current, Forward
200 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
6 ns
Voltage, Forward
1250 mV
Voltage, Reverse
70 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.2A
Rev Curr
2.5uA
Peak Non-repetitive Surge Current (max)
0.5A
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV70LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV70LT1G
Manufacturer:
ON Semiconductor
Quantity:
77 992
Company:
Part Number:
BAV70LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV70LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
BAV70LT1
Dual Switching Diode
Common Cathode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2007
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Packages are Available
(Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate,
(Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
A
= 25°C
Rating
(EACH DIODE)
Preferred Device
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
200
500
225
556
300
417
1.8
2.4
70
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
mW
mW
mA
mA
°C
V
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
A4
M
G
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
1
CATHODE
ORDERING INFORMATION
2
3
= Device Code
= Date Code*
= Pb−Free Package
MARKING DIAGRAM
(Pb−Free)
(Pb−Free)
3
Package
1
SOT−23
SOT−23
SOT−23
SOT−23
A4 M G
G
SOT−23 (TO−236)
10,000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
CASE 318
STYLE 9
ANODE
ANODE
Shipping
1
2
†
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BAV70LT1G Summary of contents
Page 1
... D 2.4 mW/°C °C/W R 417 qJA ° − stg +150 BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 ANODE CATHODE ANODE 3 SOT−23 (TO−236) CASE 318 1 ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Voltage Leakage Current (Note 3) Diode Capacitance Forward Voltage Reverse Recovery Time ( mA 1.0 mA) (Figure R(REC) 3. For each individual diode while ...
Page 3
... L 0.95 0.037 0.9 0.035 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BAV70LT1 SOT−23−3 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...