BAT54CLT3G ON Semiconductor, BAT54CLT3G Datasheet - Page 2

• Manufacturer Part Number: BAT54CLT3G
• Description: DIODE SWITCH DUAL CC 30V SOT-23
• Manufacturer: ON Semiconductor

Specifications of BAT54CLT3G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Maximum Power Dissipation: 225 mW
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage (I
Total Capacitance (V
Reverse Leakage (V
Forward Voltage (I
Forward Voltage (I
Forward Voltage (I
Reverse Recovery Time
Forward Voltage (I
Forward Voltage (I
(I
F
= I
R
= 10 mAdc, I
F
F
F
F
F
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= 1.0 mAdc)
= 10 mAdc)
R
R
= 25 V)
R(REC)
= 1.0 V, f = 1.0 MHz)
= 1.0 mAdc, Figure 1)
R
= 10 mA)
Characteristic
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
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2
Symbol
V
(BR)R
C
V
V
V
V
V
I
t
R
rr
T
F
F
F
F
F
Min
30
−
−
−
−
−
−
−
−
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
Max
0.24
0.32
0.40
2.0
0.5
0.8
5.0
10
−
Unit
pF
mA
ns
V
V
V
V
V
V