MMBD6100LT1G ON Semiconductor, MMBD6100LT1G Datasheet - Page 2

DIODE SWITCH DUAL 70V SOT23S

MMBD6100LT1G

Manufacturer Part Number
MMBD6100LT1G
Description
DIODE SWITCH DUAL 70V SOT23S
Manufacturer
ON Semiconductor
Datasheets

Specifications of MMBD6100LT1G

Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
2.5 pF
Current, Forward
200 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
1.1 V
Voltage, Reverse
70 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD6100LT1GOS
MMBD6100LT1GOS
MMBD6100LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBD6100LT1G
Quantity:
12 000
Part Number:
MMBD6100LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBD6100LT1G
Manufacturer:
MAX
Quantity:
4 464
Part Number:
MMBD6100LT1G
Manufacturer:
ONSEMI
Quantity:
20 000
+10 V
100
1.0
0.1
10
50 W OUTPUT
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
V
2.0 k
100 mH
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
0.6
I
F
2. Input pulse is adjusted so I
3. t
1.0
0.9
0.6
0.7
0.8
DUT
p
CURVES APPLICABLE TO EACH CATHODE
Figure 1. Recovery Time Equivalent Test Circuit
0
0.8
» t
rr
T
A
= 25°C
0.1 mF
OSCILLOSCOPE
T
A
50 W INPUT
SAMPLING
1.0
= −40°C
2
V
Figure 4. Capacitance
R
, REVERSE VOLTAGE (VOLTS)
MMBD6100LT1
1.2
R(peak)
V
2
4
R
is equal to 10 mA.
0.001
0.01
t
1.0
0.1
r
10
INPUT SIGNAL
10%
90%
0
t
p
6
10
t
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
F
8
) of 10 mA.
T
T
T
T
T
A
A
A
A
A
20
= 150°C
= 125°C
= 85°C
= 55°C
= 25°C
I
I
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50

Related parts for MMBD6100LT1G