BAT54CLT1G ON Semiconductor, BAT54CLT1G Datasheet - Page 8
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BAT54CLT1G
Manufacturer Part Number
BAT54CLT1G
Description
DIODE SCHOTTKY DUAL 30V CC SOT23
Manufacturer
ON Semiconductor
Specifications of BAT54CLT1G
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Common Cathode
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Maximum Power Dissipation
225 mW
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Capacitance, Junction
7.6 pF
Current, Forward
200 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Time, Recovery
5 ns
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54CLT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAT54CLT1G
Manufacturer:
MOT
Quantity:
6 000
Company:
Part Number:
BAT54CLT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
BAT54CLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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