BAT54AWT1G ON Semiconductor, BAT54AWT1G Datasheet - Page 2

• Manufacturer Part Number: BAT54AWT1G
• Description: DIODE SCHOTTKY DUAL 30V SOT-323
• Manufacturer: ON Semiconductor

Specifications of BAT54AWT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54AWT1G; BAT54AWT1GOSTR

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Time
Forward Voltage
Forward Voltage
(I
(V
(V
(I
(I
(I
(I
(I
(I
R
F
F
F
F
F
F
R
R
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= I
= 1.0 mAdc)
= 10 mAdc)
= 10 mA)
= 1.0 V, f = 1.0 MHz)
= 25 V)
R
= 10 mAdc, I
Characteristic
R(REC)
= 1.0 mAdc, Figure 1)
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
http://onsemi.com
2
Symbol
V
(BR)R
C
V
V
V
V
V
I
t
R
rr
T
F
F
F
F
F
Min
30
−
−
−
−
−
−
−
−
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
Max
0.24
0.32
0.40
2.0
0.5
0.8
5.0
10
−
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
V