MBRD660CTRLG ON Semiconductor, MBRD660CTRLG Datasheet - Page 4

• Manufacturer Part Number: MBRD660CTRLG
• Description: DIODE SCHOTTKY 60V 3A DPAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRD660CTRLG

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: MBRD660CTRLG; MBRD660CTRLGOSTR

100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0
Figure 1. Typical Forward Voltage, Per Leg
150°C
0.2
125°C
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.4
75°C
T
0.6
C
= 25°C
0.8
1.0
TYPICAL CHARACTERISTICS
1.2
http://onsemi.com
1.4
4
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
0.001
0.01
100
1.0
0.1
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
14
13
12
10
11
0
0
0
Figure 3. Average Power Dissipation, Per Leg
Figure 2. Typical Reverse Current,* Per Leg
1.0
I
PK
10
/I
I
F(AV)
AV
2.0
= 20
, AVERAGE FORWARD CURRENT (AMPS)
V
20
R
3.0
, REVERSE VOLTAGE (VOLTS)
4.0
30
T
J
10
125°C
= 150°C
75°C
25°C
5.0
R
is sufficient below rated V
40
6.0
5
7.0
50
dc
WAVE
T
SINE
J
8.0
= 150°C
60
SQUARE
WAVE
9.0
R
70
10
.