MBRF20H100CTG ON Semiconductor, MBRF20H100CTG Datasheet - Page 2

• Manufacturer Part Number: MBRF20H100CTG
• Description: DIODE SCHOTTKY 20A 100V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRF20H100CTG

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.88 V @ 20 A
• Maximum Reverse Leakage Current: 6000 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Specification Brochure, BRD8011/D.
MBR20H100CT
MBR20H100CTG
MBRF20H100CTG
MBRB20H100CTT4G
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Maximum Thermal Resistance
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(MBR20H100CT and MBRB20H100CT)
(MBRF20H100CT)
(I
(I
(I
(I
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
= 10 A, T
= 10 A, T
= 20 A, T
= 20 A, T
Device Order Number
R
R
) T
, Square Wave, 20 kHz) T
C
C
C
C
C
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 162°C
(Per Diode Leg)
C
C
= 125°C)
= 25°C)
R
)
C
(Per Diode Leg)
Rating
= 160°C
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
http://onsemi.com
Package Type
TO−220FP
(Pb−Free)
(Pb−Free)
(Pb−Free)
TO−220
TO−220
D
2
PAK
2
Symbol
D
W
V
V
I
/dT
dv/dt
R
R
I
R
I
F(AV)
T
FRM
FSM
RWM
RRM
V
T
AVAL
v
qJC
qJC
i
stg
qJA
R
F
R
J
J
< 1/R
800 / Tape & Reel
qJA
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
*65 to +175
.
10,000
> 8000
0.0045
Value
> 400
+175
0.77
0.64
0.88
0.73
100
250
200
2.0
2.5
6.0
10
20
60
†
°C/W
Unit
V/ms
mA
mJ
°C
°C
V
A
A
A
V
V