MBR20H150CTG ON Semiconductor, MBR20H150CTG Datasheet - Page 4

• Manufacturer Part Number: MBR20H150CTG
• Description: DIODE SCHTTKY DUAL H-SER TO220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20H150CTG

• Voltage - Forward (vf) (max) @ If: 870mV @ 10A
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Switching Diodes
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 20 A
• Max Surge Current: 180 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.87 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 20 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 20 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
0.01
100
0.000001
0.000001
0.1
0.1
10
10
1
1
0.05
0.01
0.05
D = 0.5
0.01
D = 0.5
0.2
0.1
0.2
0.1
SINGLE PULSE
0.00001
0.00001
SINGLE PULSE
Figure 8. Thermal Response Junction-to-Ambient for MBR20H150CTG
Figure 9. Thermal Response Junction-to-Case for MBR20H150CTG
0.0001
0.0001
1000
100
10
0
MBRF20H150CTG, MBR20H150CTG
0.001
0.001
V
R
Figure 7. Capacitance
, REVERSE VOLTAGE (V)
50
http://onsemi.com
t
t
1
1
0.01
, TIME (sec)
0.01
, TIME (sec)
4
100
0.1
0.1
T
J
= 25°C
1
1
150
10
10
P
P
DUTY CYCLE, D = t
DUTY CYCLE, D = t
(pk)
(pk)
100
100
t
t
1
1
t
t
2
2
1
1
/t
/t
2
2
1000
1000