MBRB30H30CT-1G ON Semiconductor, MBRB30H30CT-1G Datasheet - Page 5

• Manufacturer Part Number: MBRB30H30CT-1G
• Description: DIODE SCHOTTKY 30V 15A H I2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB30H30CT-1G

• Voltage - Forward (vf) (max) @ If: 480mV @ 15A
• Current - Reverse Leakage @ Vr: 800µA @ 30V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

0.01
0.000001
0.1
10
1
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
0.00001
3000
2500
2000
1500
1000
0.0001
500
0
0
Figure 7. Typical Capacitance for MBR30H30CTG
Figure 8. Thermal Response Junction-to-Case
MBRB30H30CT-1G, MBR30H30CTG
0.001
5
V
R
, REVERSE VOLTAGE (VOLTS)
10
http://onsemi.com
t
1
0.01
, TIME (sec)
15
5
20
0.1
T
J
25
= 25°C
1
30
10
P
DUTY CYCLE, D = t
(pk)
100
t
1
t
2
1
/t
2
1000