MURB1620CTT4G ON Semiconductor, MURB1620CTT4G Datasheet - Page 4

• Manufacturer Part Number: MURB1620CTT4G
• Description: DIODE ULTRA FAST 200V 8A D2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MURB1620CTT4G

• Voltage - Forward (vf) (max) @ If: 975mV @ 8A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MURB1620CTT4GOS; MURB1620CTT4GOS; MURB1620CTT4GOSTR

SEATING
PLANE
−T−
VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
1
G
−B−
4
2
F
1
3
D
0.13 (0.005)
L
3 PL
S
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
M
R
T
VIEW W−W
B
M
8.38
0.33
K
F
2
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
C
H
http://onsemi.com
N
MURB1620CT
CASE 418B−04
17.02
0.67
L
A
D
ISSUE J
E
2
J
PAK 3
V
W
W
4
M
U
VIEW W−W
3.05
0.12
1.016
0.04
F
3
SCALE 3:1z
P
5.08
0.20
L
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
STYLE 3:
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
inches
DIM
PIN 1. ANODE
M
mm
A
B
C
D
E
G
H
K
N
P
R
S
V
F
J
L
2. CATHODE
3. ANODE
4. CATHODE
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.110
0.025
0.110
0.072
0.320
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
7.11
1.14
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40