MBR60L45CTG ON Semiconductor, MBR60L45CTG Datasheet - Page 2

• Manufacturer Part Number: MBR60L45CTG
• Description: DIODE SCHOTTKY 60A 45V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR60L45CTG

• Voltage - Forward (vf) (max) @ If: 550mV @ 30A
• Current - Reverse Leakage @ Vr: 1.2mA @ 45V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
ESD Ratings: Machine Model = C
Maximum Thermal Resistance
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(MBR60L45CTG)
(MBR60L45WTG)
(I
(I
(I
(I
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
= 30 A, T
= 30 A, T
= 60 A, T
= 60 A, T
R
R
R
) T
) T
, Square Wave, 20 kHz)
C
C
C
C
C
C
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 145°C for MBR60L45CTG
= 165°C for MBR60L45WTG
(Per Diode Leg)
C
C
= 25°C)
= 125°C)
R
)
(Per Diode Leg)
Rating
− Junction−to−Case
− Junction−to−Case
http://onsemi.com
2
Symbol
D
V
V
I
dv/dt
I
R
R
I
/dT
F(AV)
T
FRM
FSM
RWM
RRM
V
T
v
qJC
qJC
i
stg
R
R
F
J
J
< 1/R
qJA
−65 to +175
−65 to +175
.
10,000
> 8000
Value
> 400
0.59
0.55
0.53
0.73
0.76
200
275
1.9
1.2
45
30
60
°C/W
Unit
V/ms
mA
°C
°C
V
A
A
A
V
V