MBRB41H100CT-1G ON Semiconductor, MBRB41H100CT-1G Datasheet - Page 2

• Manufacturer Part Number: MBRB41H100CT-1G
• Description: DIODE SCHOTTKY 100V 20A H I2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB41H100CT-1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 20 A
• Max Surge Current: 350 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.9 V @ 40 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS (PER DIODE LEG)
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Maximum Thermal Resistance − Junction−to−Case
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(I
(I
(I
(I
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
= 20 A, T
= 20 A, T
= 40 A, T
= 40 A, T
R
R
) T
, Square Wave, 20 kHz) T
C
C
C
C
C
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 150°C
(Per Diode Leg)
C
C
= 125°C)
= 25°C)
− Junction−to−Ambient
R
)
C
(Per Diode Leg)
Rating
= 145°C
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2
Symbol
D
W
V
V
I
dv/dt
I
R
R
I
/dT
F(AV)
T
FRM
FSM
RWM
RRM
V
T
AVAL
v
qJC
i
stg
qJA
R
R
F
J
J
< 1/R
qJA
*65 to +175
.
10,000
> 8000
Value
> 400
+175
0.80
0.67
0.90
0.76
0.01
100
350
400
2.0
20
40
70
10
°C/W
Unit
V/ms
mA
mJ
°C
°C
V
A
A
A
V
V