MBR4015CTLG ON Semiconductor, MBR4015CTLG Datasheet - Page 2

• Manufacturer Part Number: MBR4015CTLG
• Description: DIODE SCHOTTKY 15V 20A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR4015CTLG

• Voltage - Forward (vf) (max) @ If: 430mV @ 20A
• Current - Reverse Leakage @ Vr: 10mA @ 15V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 15 V
• Forward Continuous Current: 20 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.54 V @ 40 A
• Maximum Reverse Leakage Current: 10000 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR4015CTLGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, T
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
100
(T
(T
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
1.0
0.1
10
F
F
F
F
C
C
= 20 Amps, T
= 40 Amps, Tj = 125°C)
= 20 Amps, Tj = 25°C)
= 40 Amps, Tj = 25°C)
0
= 140°C per Diode)
= 140°C per Device)
125°C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
Figure 1. Typical Forward Voltage
150°C
j
= 125°C)
0.2
Characteristic
Characteristic
25°C
R
0.3
)
(Per Diode)
100°C
75°C
Rating
0.4
0.5
http://onsemi.com
0.6
2
C
= 135°C)
100
Min. Pad
Min. Pad
1.0
0.1
Symbol
10
v
i
Conditions
R
0
F
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.1
Min
125°C
−
−
−
−
−
−
D
0.2
/dT
150°C
Symbol
Symbol
Typical
J
V
V
I
I
dv/dt
R
R
I
I
0.31
0.45
0.41
0.51
F(AV)
300
FRM
RRM
T
< 1/R
RWM
FSM
0.8
RRM
V
T
qJC
qJA
stg
R
J
0.3
25°C
qJA
.
−65 to +175
−65 to +150
75°C
0.4
Value
1,000
Max
Max
0.34
0.50
0.43
0.54
150
600
1.0
1.3
15
20
40
40
70
10
100°C
0.5
°C/W
Unit
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V
0.6