MBR4015CTLG ON Semiconductor, MBR4015CTLG Datasheet - Page 2
![DIODE SCHOTTKY 15V 20A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MBR4015CTLG
Manufacturer Part Number
MBR4015CTLG
Description
DIODE SCHOTTKY 15V 20A TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MBR4015CTLG.pdf
(4 pages)
Specifications of MBR4015CTLG
Voltage - Forward (vf) (max) @ If
430mV @ 20A
Current - Reverse Leakage @ Vr
10mA @ 15V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
15V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
15 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.54 V @ 40 A
Maximum Reverse Leakage Current
10000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR4015CTLGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR4015CTLG
Manufacturer:
ON Semiconductor
Quantity:
60
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, T
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
100
(T
(T
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
1.0
0.1
10
F
F
F
F
C
C
= 20 Amps, T
= 40 Amps, Tj = 125°C)
= 20 Amps, Tj = 25°C)
= 40 Amps, Tj = 25°C)
0
= 140°C per Diode)
= 140°C per Device)
125°C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
Figure 1. Typical Forward Voltage
150°C
j
= 125°C)
0.2
Characteristic
Characteristic
25°C
R
0.3
)
(Per Diode)
100°C
75°C
Rating
0.4
0.5
http://onsemi.com
0.6
2
C
= 135°C)
100
Min. Pad
Min. Pad
1.0
0.1
Symbol
10
v
i
Conditions
R
0
F
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.1
Min
125°C
−
−
−
−
−
−
D
0.2
/dT
150°C
Symbol
Symbol
Typical
J
V
V
I
I
dv/dt
R
R
I
I
0.31
0.45
0.41
0.51
F(AV)
300
FRM
RRM
T
< 1/R
RWM
FSM
0.8
RRM
V
T
qJC
qJA
stg
R
J
0.3
25°C
qJA
.
−65 to +175
−65 to +150
75°C
0.4
Value
1,000
Max
Max
0.34
0.50
0.43
0.54
150
600
1.0
1.3
15
20
40
40
70
10
100°C
0.5
°C/W
Unit
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V
0.6