MURHF860CTG ON Semiconductor, MURHF860CTG Datasheet - Page 2

• Manufacturer Part Number: MURHF860CTG
• Description: DIODE ULT FAST 600V 4A TO-220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MURHF860CTG

• Voltage - Forward (vf) (max) @ If: 2.8V @ 4A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Current - Average Rectified (io) (per Diode): 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.8 V @ 4 A
• Recovery Time: 35 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
(I
F
F
F
= 4.0 A, T
= 4.0 A, T
= 1.0 A, di/dt = 50 A/ms)
C
C
= 150°C)
= 25°C)
C
C
= 150°C)
= 25°C)
Characteristic
(Per Leg)
http://onsemi.com
MURHF860CT
2
Symbol
v
i
t
R
rr
F
Value
500
2.5
2.8
10
35
Unit
mA
ns
V