BYV52PI-200RG STMicroelectronics, BYV52PI-200RG Datasheet - Page 2
![DIODE FAST REC 200V 30A HE TOP31](/photos/5/30/53061/top3_sml.jpg)
BYV52PI-200RG
Manufacturer Part Number
BYV52PI-200RG
Description
DIODE FAST REC 200V 30A HE TOP31
Manufacturer
STMicroelectronics
Datasheet
1.BYV52PI-200RG.pdf
(6 pages)
Specifications of BYV52PI-200RG
Voltage - Forward (vf) (max) @ If
850mV @ 20A
Current - Reverse Leakage @ Vr
25µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TOP-3 Insulated
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3807
497-3807-5
497-3807-5
BYV52/PI
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Pulse test : * tp = 5 ms, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x I
2/6
RECOVERY CHARACTERISTICS
Symbol
Symbol
Symbol
Rth (j-c)
trr
tfr
V
Rth (c)
V
I
FP
R
F **
*
** tp = 380 s, duty cycle < 2 %
F(AV)
T
T
T
T
T
T
T
T
+ 0.0075 x I
j
j
j
j
j
j
j
j
Junction to case
Coupling
= 25 C
= 100 C
= 125 C
= 125 C
= 25 C
= 25 C
= 25 C
= 25 C
F
2
(RMS)
Test Conditions
Test Conditions
I
I
I
V
I
V
I
F
R
F
F
F
R
FR
V
I
I
I
= 0.5A
= 1A
= 1A
= 1A
= 1A
F
F
F
= 30V
R
= 20 A
= 40 A
= 40 A
= 1.1 x V
= V
Parameter
RRM
F
SOT93
TOP3I
SOT93
TOP3I
Irr = 0.25A
dI
tr = 5 ns
tr = 5 ns
F
/dt = -50A/ s
Per diode
Total
Per diode
Total
Min.
Min.
Typ.
Typ.
10
1.5
Value
0.75
1.2
1.8
1.2
0.3
0.6
Max.
Max.
0.85
1.00
1.15
2.5
35
50
25
Unit
Unit
Unit
mA
ns
ns
V
C/W
C/W
V
A