BYW51G-200-TR STMicroelectronics, BYW51G-200-TR Datasheet - Page 5

• Manufacturer Part Number: BYW51G-200-TR
• Description: DIODE FAST REC 10A 200V D2PAK
• Manufacturer: STMicroelectronics

Specifications of BYW51G-200-TR

• Voltage - Forward (vf) (max) @ If: 850mV @ 8A
• Current - Reverse Leakage @ Vr: 15µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V at 16 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 100 A
• Reverse Current Ir: 15 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 9: Peak reverse recovery current versus dI
(per diode).
50
10
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 m)
(D
80
70
60
50
40
30
20
10
1
0
10
0
2
IRM(A)
Rth(j-a) (°C/W)
PAK) .
90% confidence
Tj=125°C
IF=IF(av)
5
20
10
15
50
dIF/dt(A/µs)
S(Cu) (cm²)
20
100
25
200
30
35
F
500
/dt
40
Fig. 10: Dynamic parameters versus junction
temperature.
1.25
1.00
0.75
0.50
0.25
0
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
25
50
IRM
Qrr
Tj(°C)
BYW51/F/G/FP/R-200
75
100
125
150
5/9