BAS40-04LT1 ON Semiconductor, BAS40-04LT1 Datasheet

DIODE SCHOTTKY DUAL 40V SOT23

BAS40-04LT1

Manufacturer Part Number
BAS40-04LT1
Description
DIODE SCHOTTKY DUAL 40V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS40-04LT1

Voltage - Forward (vf) (max) @ If
1V @ 40mA
Current - Reverse Leakage @ Vr
1µA @ 25V
Current - Average Rectified (io) (per Diode)
120mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Other names
BAS40-04LT1OSCT

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BAS40-04LT1G
Dual Series
Schottky Barrier Diode
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
Reverse Voltage
Forward Power Dissipation
Operating Junction and Storage Temper-
ature Range
Forward Continuous Current
Single Forward Current
Thermal Resistance
Junction−to−Ambient
These Schottky barrier diodes are designed for high speed switching
Compliant
Extremely Fast Switching Speed
Low Forward Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
@ T
Derate above 25°C
A
= 25°C
Rating
t v 10 ms
t v 1 s
Symbol
T
R
I
J,
I
FSM
V
P
FM
qJA
T
R
F
stg
(Note 1)
(Note 2)
−55 to
Value
+150
225
120
200
600
508
311
1.8
40
1
mW/°C
°C/W
Unit
mW
mA
mA
°C
V
†For information on tape and reel specifications,
BAS40−04LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SCHOTTKY BARRIER DIODES
SOT−23 (TO−236AB)
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
CASE 318
STYLE 11
ANODE
ORDERING INFORMATION
CB
M
G
2
1
http://onsemi.com
= Specific Device Code
= Date Code*
= Pb−Free Package
3
40 VOLTS
CATHODE/ANODE
Package
(Pb−Free)
SOT−23
Publication Order Number:
3
1
3000/ Tape & Reel
MARKING
DIAGRAM
CATHODE
BAS40−04LT1/D
CB MG
Shipping
2
G

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BAS40-04LT1 Summary of contents

Page 1

... BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage Total Capacitance Reverse Leakage ( Forward Voltage Forward Voltage Forward Voltage = 25°C unless otherwise noted) A Symbol mA) R (BR 1.0 V, ...

Page 3

V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage 3.5 3.0 2.5 2.0 1.5 1.0 0 100 ...

Page 4

... E STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS40−04LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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