DAP222T1 ON Semiconductor, DAP222T1 Datasheet - Page 2

• Manufacturer Part Number: DAP222T1
• Description: DIODE SWITCH DUAL CA 80V SOT416
• Manufacturer: ON Semiconductor

Specifications of DAP222T1

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: DAP222T1OS

1. t = 1 mS
2. t
3. trr Test Circuit for DAP202U in Figure 5.
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
100
rr
1.0
0.1
10
Test Circuit for DAP222 in Figure 4.
0.2
Characteristic
0.4
Figure 1. Forward Voltage
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
DAP202U
0.6
DAP222
1.75
0.75
1.25
TYPICAL ELECTRICAL CHARACTERISTICS
T
1.5
Symbol
1.0
0.8
A
(T
t
= 25°C
t
rr
V
C
tt
V
0
I
A
(2)
(3)
R
R
F
D
= 25°C)
T
A
= −40°C
1.0
I
F
I
DAP222, DAP202U
F
Figure 3. Diode Capacitance
= 5.0 mA, V
= 5.0 mA, V
http://onsemi.com
2
V
R
, REVERSE VOLTAGE (VOLTS)
1.2
V
R
2
R
R
= 6.0 V, f = 1.0 MHz
= 6.0 V, R
= 6.0 V, R
I
I
0.001
F
Condition
R
V
0.01
4
1.0
0.1
= 100 mA
R
10
= 100 mA
= 70 V
0
L
L
= 100 W, I
= 50 W, I
6
10
Figure 2. Reverse Current
rr
V
rr
R
= 0.1 I
= 0.1 I
, REVERSE VOLTAGE (VOLTS)
T
T
T
T
A
A
T
A
A
R
20
R
= 150°C
= 125°C
A
= 55°C
= 25°C
= 85°C
8
Min
80
−
−
−
−
−
30
Max
10.0
0.1
1.2
3.5
4.0
−
40
mAdc
Unit
Vdc
Vdc
pF
ns
50