BAT54SLT1G ON Semiconductor, BAT54SLT1G Datasheet - Page 4
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BAT54SLT1G
Manufacturer Part Number
BAT54SLT1G
Description
DIODE SCHOTTKY DUAL 30V SOT23
Manufacturer
ON Semiconductor
Specifications of BAT54SLT1G
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Series
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Capacitance, Junction
7.6 pF
Current, Forward
200 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Time, Recovery
5 ns
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
30V
Avg. Forward Curr (max)
0.2A
Rev Curr
2uA
Peak Non-repetitive Surge Current (max)
1A
Forward Voltage
0.8V
Operating Temp Range
-55C to 150C
Rev Recov Time
5ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54SLT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAT54SLT1G
Manufacturer:
ON Semiconductor
Quantity:
70 625
Company:
Part Number:
BAT54SLT1G
Manufacturer:
ON Semiconductor
Quantity:
500
Company:
Part Number:
BAT54SLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAT54SLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
BAT54T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMSZ5254ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ5265BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
0/6
0/90
0/2
0/30
0/4
0/60
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