BAV99LT1G ON Semiconductor, BAV99LT1G Datasheet
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BAV99LT1G
Specifications of BAV99LT1G
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BAV99LT1G Summary of contents
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... Symbol Max Unit P 225 mW D 1.8 mW/°C °C/W 556 R qJA P 300 mW D BAV99LT1 BAV99LT1G 2.4 mW/°C °C/W R 417 qJA BAV99LT3 ° − stg BAV99LT3G +150 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...
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OFF CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode) A Characteristic Reverse Breakdown Voltage, = 100 mA) (I (BR) Reverse Voltage Leakage Current Vdc Vdc Vdc, T ...
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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BAV99LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...