ES3D-13-F Diodes Inc, ES3D-13-F Datasheet - Page 2

• Manufacturer Part Number: ES3D-13-F
• Description: DIODE FAST REC 3A 200V SMC
• Manufacturer: Diodes Inc

Specifications of ES3D-13-F

• Voltage - Forward (vf) (max) @ If: 900mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.9 V
• Recovery Time: 25 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS Compliant
• Other names: ES3D-FDITR

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 4)
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Typical Thermal Resistance, Junction to Terminal
Typical Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Maximum Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 4)
Maximum Reverse Recovery Time (Note 6)
Typical Total Capacitance (Note 7)
Notes:
ES3A/AB - ES3D/DB
Document number: DS14003 Rev. 15 - 2
4. Short duration pulse test used to minimize self-heating effect.
5. Unit mounted on PC board with 5.0 mm
6. Measured with I
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4
3
2
1
0
25
Fig. 1 Forward Current Derating Curve
50
T , TERMINAL TEMPERATURE ( C)
T
Characteristic
Characteristic
Characteristic
F
= 0.5A, I
75
@T
A
= 25°C unless otherwise specified
R
100
= 1.0A, I
@T
rr
125
= 0.25A. See Figure 5.
A
2
= 25°C unless otherwise specified
Note 3
(0.013 mm thick) copper pads as heat sink.
@ T
@ T
@ T
150
°
@ I
A
T
A
= 100°C
= 25°C
= 125°C
F
= 3.0A
175
www.diodes.com
Symbol
Symbol
T
Symbol
V
V
V
J,
R(RMS)
R
R
I
2 of 4
V
I
RWM
V
FSM
C
RRM
I
RM
T
t
θ JA
θ JT
FM
O
rr
R
T
STG
ES3A/AB
0.01
50
35
1.0
0.1
10
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
ES3B/BB
100
70
0.4
-55 to +150
Value
Value
100
500
3.0
0.9
10
50
10
25
45
0.8
ES3C/CB
ES3A/AB - ES3D/DB
150
105
1.2
ES3D/DB
200
140
© Diodes Incorporated
November 2010
1.6
°C/W
Unit
Unit
Unit
μA
°C
°C
ns
pF
V
V
A
A
V