BAS19,215 NXP Semiconductors, BAS19,215 Datasheet - Page 6

• Manufacturer Part Number: BAS19,215
• Description: DIODE GEN-PURP 120V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS19,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 100V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4860-2; 933502020215; BAS19 T/R; BAS19 T/R; BAS19,215

NXP Semiconductors
2003 Mar 20
handbook, halfpage
handbook, halfpage
General purpose diodes
(1) V
(2) V
Fig.5
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
(µA)
V R
(V)
10
10
300
200
100
I R
10
10
R
R
0
1
2
1
2
= V
= V
0
0
Reverse current as a function of junction
temperature.
Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
(1)
(2)
(3)
Rmax
Rmax
; maximum values.
; typical values.
(1)
100
100
(2)
T amb (
T j (
o
C)
o
C)
MBG445
MBG381
200
200
6
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.0
0.8
0.6
0.4
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
BAS19; BAS20; BAS21
4
6
Product data sheet
V R (V)
MBG447
8