BAS16HT1G ON Semiconductor, BAS16HT1G Datasheet - Page 2

• Manufacturer Part Number: BAS16HT1G
• Description: DIODE SWITCH 200MA 75V SOD323
• Manufacturer: ON Semiconductor

Specifications of BAS16HT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.2 A
• Configuration: Single
• Recovery Time: 6 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 75V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 0.5A
• Forward Voltage: 1.25V
• Operating Temp Range: -55C to 150C
• Package Type: SOD-323
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 75V
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 6ns
• Forward Surge Current Ifsm Max: 500mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16HT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Stored Charge
(V
(V
(V
(I
(I
(I
(I
(I
(V
(I
(I
(I
R
BR
F
F
F
F
F
F
F
L
R
R
R
R
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= 10 mAdc, t
= I
= 10 mAdc to V
= 500 Ω)
= 75 Vdc)
= 75 Vdc, T
= 25 Vdc, T
= 0, f = 1.0 MHz)
= 100 mAdc)
R
= 10 mAdc, R
J
J
r
= 20 ns)
= 150C)
= 150C)
R
= 5.0 Vdc,
L
= 50 Ω)
Characteristic
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
Symbol
V
V
C
Q
V
(BR)
I
t
FR
R
rr
F
D
S
Min
75
--
--
--
--
--
--
--
--
--
--
--
1000
1250
Max
1.75
715
855
1.0
2.0
6.0
50
30
45
--
mAdc
Unit
Vdc
Vdc
mV
pF
pC
ns