1SS400T1G ON Semiconductor, 1SS400T1G Datasheet - Page 2

• Manufacturer Part Number: 1SS400T1G
• Description: DIODE SWITCH 200MA 100V SOD523
• Manufacturer: ON Semiconductor

Specifications of 1SS400T1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 80V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1SS400T1GOSTR

+10 V
100
1.0
0.1
10
50 W OUTPUT
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
2.0 k
V
100 mH
T
F
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
0.6
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
DUT
0.68
0.64
0.60
0.56
0.52
2. Input pulse is adjusted so I
3. t
0.8
p
Figure 1. Recovery Time Equivalent Test Circuit
0
» t
T
A
rr
= 25°C
0.1 mF
OSCILLOSCOPE
T
A
50 W INPUT
SAMPLING
1.0
= -40°C
2.0
V
http://onsemi.com
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.2
R(peak)
V
2
R
4.0
0.001
0.01
1.0
0.1
t
is equal to 10 mA.
10
r
INPUT SIGNAL
0
10%
90%
t
p
6.0
10
Figure 3. Leakage Current
t
V
R
, REVERSE VOLTAGE (VOLTS)
T
T
T
T
T
8.0
F
A
A
20
A
A
A
) of 10 mA.
= 150°C
= 125°C
= 85°C
= 55°C
= 25°C
I
I
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50