MMDL770T1G ON Semiconductor, MMDL770T1G Datasheet

DIODE SCHOTTKY 70V SOD-323

MMDL770T1G

Manufacturer Part Number
MMDL770T1G
Description
DIODE SCHOTTKY 70V SOD-323
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMDL770T1G

Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
70V
Current - Reverse Leakage @ Vr
200nA @ 35V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
1pF @ 20V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.01
Rev Curr
0.2uA
Forward Voltage
1@0.01AV
Operating Temp Range
-55C to 150C
Package Type
SOD-323
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.01 A
Forward Voltage Drop
1 V @ 0.01 A
Maximum Reverse Leakage Current
0.2 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Average Rectified (io)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMDL770T1G
MMDL770T1GOSTR

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MMDL770T1G
Schottky Barrier Diode
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
 Semiconductor Components Industries, LLC, 2010
September, 2010 - - Rev. 2
Reverse Voltage
Total Device Dissipation FR--5 Board,
(Note 1) @T
Derate above 25C
Thermal Resistance, Junction--to--Ambient
Junction and Storage Temperature Range
Schottky barrier diodes are designed primarily for high- -efficiency
Compliant
Extremely Low Minority Carrier Lifetime
Very Low Capacitance - - 1.0 pF @ 20 V
Low Reverse Leakage - - 200 nA (max)
High Reverse Voltage - - 70 V (min)
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
A
Characteristic
= 25C
Rating
Symbol
Symbol
T
R
J
V
P
, T
θJA
R
D
stg
--55 to +150
Value
Max
1.57
200
635
70
1
mW/C
C/W
Unit
Unit
mW
Vdc
C
†For information on tape and reel specifications,
MMDL770T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
Device
upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
1.0 pF SCHOTTKY
BARRIER DIODE
5H
M
G
MARKING DIAGRAM
CATHODE
http://onsemi.com
1
= Device Code
= Date Code*
= Pb--Free Package
(Pb--Free)
SOD--323
Package
1
CASE 477
SOD- -323
PLASTIC
STYLE 1
Publication Order Number:
5H M G
G
ANODE
2
3000 / Tape & Reel
2
Shipping
MMDL770T1/D

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MMDL770T1G Summary of contents

Page 1

... R C/W θ --55 to +150 C J stg MMDL770T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 2 CATHODE ANODE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Diode Capacitance ( 1.0 MHZ) R Reverse Leakage ( Forward Voltage (I = 1.0 mAdc mA) ...

Page 3

... NOTE 5 NOTE 3 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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