1N5817RLG ON Semiconductor, 1N5817RLG Datasheet - Page 2
![DIODE SCHOTTKY 20V 1A DO41](/photos/5/36/53691/do-204al_sml.jpg)
1N5817RLG
Manufacturer Part Number
1N5817RLG
Description
DIODE SCHOTTKY 20V 1A DO41
Manufacturer
ON Semiconductor
Datasheet
1.1N5819RLG.pdf
(7 pages)
Specifications of 1N5817RLG
Voltage - Forward (vf) (max) @ If
450mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.75 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5817RLGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N5817RLG
Manufacturer:
ON
Quantity:
30 000
Part Number:
1N5817RLG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1), (V
R
Ambient Temperature (Rated V
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, T
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
qJA
= 80°C/W, P.C. Board Mounting, see Note 2, T
R
(dc), P
L
Characteristic
Characteristic
= 70°C)
(Note 1)
Rating
F(AV)
(T
L
= 0, R
= 25°C unless otherwise noted) (Note 1)
R(equiv)
1N5817, 1N5818, 1N5819
qJA
A
= 55°C)
= 80°C/W)
≤ 0.2 V
http://onsemi.com
R
(dc), T
2
L
(T
= 90°C,
(T
(i
(i
(i
L
F
F
F
L
= 100°C)
= 0.1 A)
= 1.0 A)
= 3.0 A)
= 25°C)
Symbol
V
Symbol
Symbol
T
V
V
V
T
R(RMS)
R
I
J
RWM
FSM
RRM
V
J(pk)
RSM
T
, T
I
v
I
qJA
O
R
A
F
R
stg
1N5817
1N5817
0.32
0.45
0.75
1.0
20
24
14
85
10
25 (for one cycle)
−65 to +125
1N5818
1N5818
0.875
Max
0.33
0.55
150
1.0
1.0
30
36
21
80
80
10
1N5819
1N5819
0.34
0.6
0.9
1.0
40
48
28
75
10
°C/W
Unit
Unit
Unit
mA
°C
°C
°C
V
V
V
A
A
V