MBR150RLG ON Semiconductor, MBR150RLG Datasheet - Page 3

• Manufacturer Part Number: MBR150RLG
• Description: DIODE SCHOTTKY 50V 1A DO-41
• Manufacturer: ON Semiconductor

Specifications of MBR150RLG

• Voltage - Forward (vf) (max) @ If: 750mV @ 1A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 1 A @ Ta=55C
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 1 V @ 3 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR150RLGOSTR

NOTE 1. — MOUNTING DATA:
(R
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient
qJA)
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
for the mounting shown is to be used as a typical
0
1
2
3
0.1
Figure 5. Steady−State Thermal Resistance
Typical Values for R
1/8
0.2
1/4
BOTH LEADS TO HEATSINK,
1/8
52
67
—
L, LEAD LENGTH (INCHES)
Lead Length, L (in)
0.5
EQUAL LENGTH
MAXIMUM
3/8
1/4
65
80
1.0
1/2
qJA
1/2
72
87
50
in Still Air
2.0
TYPICAL
5/8
100
THERMAL CHARACTERISTICS
3/4
85
3/4
5.0
Figure 4. Thermal Response
MBR150, MBR160
°C/W
°C/W
°C/W
R
http://onsemi.com
7/8
qJA
10
t, TIME (ms)
1.0
20
3
.
200
100
80
70
60
50
40
30
20
0
50
T
R
A(A)
qS(A)
DT
DT
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
transient thermal resistance at time, t
NOTE 2. — THERMAL CIRCUIT MODEL:
10
(For heat conduction through the leads)
JL
JL
t
T
Z
p
100
L(A)
qJL(t)
= P
= the increase in junction temperature above the lead
pk
R
20
Figure 6. Typical Capacitance
qL(A)
= Z
• R
t
1
200
V
qJL
P
qJL
R
pk
30
T
, REVERSE VOLTAGE (VOLTS)
C(A)
• r(t)
[D + (1 − D) • r(t
R
qJ(A)
40
T
P
500
J
pk
TIME
50
P
R
)
D
1
q J(K
1
1 k
1
+ t
DUTY CYCLE, D = t
PEAK POWER, P
of an equivalent square
power pulse.
+ t
60
+ t
p
p
) + r(t
p
T
) = normalized value of
.
C(K)
T
f = 1 MHz
70
2 k
p
J
R
) − r(t
= 25°C
qL(K)
80
1
)] where
T
L(K)
pk
, is peak
p
5 k
R
/t
90
T
1
qS(K)
A(K)
10 k
100