MURS105T3G ON Semiconductor, MURS105T3G Datasheet - Page 3

• Manufacturer Part Number: MURS105T3G
• Description: DIODE ULTRA FAST 1A 50V SMB
• Manufacturer: ON Semiconductor

Specifications of MURS105T3G

• Voltage - Forward (vf) (max) @ If: 875mV @ 1A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: MURS105T3GOS; MURS105T3GOS; MURS105T3GOSTR

0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
0
0.3
80
0.4
90
Figure 1. Typical Forward Voltage
0.5
Figure 4. Current Derating, Case
v
100
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.6
T
110
C
, CASE TEMPERATURE (°C)
175°C
0.7
120
MURS105T3, MURS110T3, MURS115T3, MURS120T3
0.8
130
SQUARE WAVE
T
C
RATED VOLTAGE APPLIED
0.9
= 25°C
140
100°C
DC
R
1.0
qJC
T
150
J
= 175°C
= 13°C/W
1.1
160
http://onsemi.com
1.2
170
1.3
180
3
0.008
0.004
0.002
0.08
0.04
0.02
8.0
4.0
2.0
0.8
0.4
0.2
5.0
5.0
4.0
3.0
2.0
1.0
80
40
20
50
45
40
35
30
25
20
15
10
0
0
0
0
0
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
below rated V
(CAPACITANCE LOAD)
T
20
10
J
= 175°C
Figure 2. Typical Reverse Current*
I
0.5
F(AV)
20
40
Figure 3. Typical Capacitance
R
.
Figure 5. Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
V
V
R
R
30
60
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
T
T
1.0
40
I
I
T
80
PK
AV
J
J
J
= 175°C
= 100°C
= 25°C
+ 20
100
50
CAPACITANCE AT
120
60
1.5
NOTE: TYPICAL
0 V = 45 pF
140
70
SQUARE WAVE
10
R
160
is sufficiently
2.0
80
180
90
DC
5.0
200
100
2.5