MBRM120LT1G ON Semiconductor, MBRM120LT1G Datasheet - Page 4

• Manufacturer Part Number: MBRM120LT1G
• Description: DIODE SCHOTTKY 20V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM120LT1G

• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.65 V @ 3 A
• Maximum Reverse Leakage Current: 400 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 1 A
• Current, Reverse: 25 mA
• Current, Surge: 50 A
• Package Type: Case 457
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Forward: 0.45 V
• Voltage, Reverse: 20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM120LT1GOSTR

0.001
0.001
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1.0
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1.0
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0.00001
0.00001
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5.0%
50%
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10%
5.0%
2.0%
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0.0001
0.0001
Rtjl(t) = Rtjl*r(t)
0.001
Figure 10. Thermal Response Junction to Ambient
Figure 9. Thermal Response Junction to Lead
0.001
Rtjl(t) = Rtjl*r(t)
0.01
http://onsemi.com
MBRM120L
0.01
T, TIME (s)
T, TIME (s)
4
0.1
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1.0
1.0
10
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1,000
100