MBRM130LT1G ON Semiconductor, MBRM130LT1G Datasheet - Page 3

DIODE SCHOTTKY 30V 1A POWERMITE

MBRM130LT1G

Manufacturer Part Number
MBRM130LT1G
Description
DIODE SCHOTTKY 30V 1A POWERMITE
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBRM130LT1G

Voltage - Forward (vf) (max) @ If
380mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
410µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
Powermite®
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.52 V @ 3 A
Maximum Reverse Leakage Current
410 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
30V
Avg. Forward Curr (max)
1A
Rev Curr
410uA
Peak Non-repetitive Surge Current (max)
50A
Forward Voltage
0.52V
Operating Temp Range
-55C to 125C
Package Type
Power Mite
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
1 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRM130LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRM130LT1G
Manufacturer:
ON
Quantity:
12 000
Part Number:
MBRM130LT1G
Manufacturer:
ON Semiconductor
Quantity:
29 800
Part Number:
MBRM130LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBRM130LT1G
0
Company:
Part Number:
MBRM130LT1G
Quantity:
1 658
100E−6
1.0E−3
1.0E−6
10E−3
10E−6
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0
25
0
0
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
J
may be calculated from the equation:
35
5.0
SQUARE WAVE
5.0
Figure 3. Typical Reverse Current
45
V
I
V
I
T
I
I
pk
Figure 5. Current Derating
pk
pk
R
pk
R
L
, REVERSE VOLTAGE (VOLTS)
/I
/I
, LEAD TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
dc
/I
/I
o
55
o
Figure 7. Capacitance
o
o
= 10
= 20
T
= p
T
= 5
10
10
J
J
= 85°C
= 25°C
65
75
15
15
85
20
20
95
FREQ = 20 kHz
T
J
J
105
J
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
= 25°C
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
25
25
J
http://onsemi.com
= T
115
MBRM130L
Jmax
125
30
30
− r(t)(Pf + Pr) where
3
100E−3
100E−6
1.0E−3
10E−3
10E−6
150
140
130
120
100
110
0.7
0.6
0.5
0.4
0.3
0.2
0.1
90
80
70
60
50
40
30
20
0
Figure 8. Typical Operating Temperature Derating*
0
0
0
I
pk
/I
0.2
I
o
O
Figure 6. Forward Power Dissipation
= 20
, AVERAGE FORWARD CURRENT (AMPS)
5.0
Figure 4. Maximum Reverse Current
V
5.0
I
pk
R
V
/I
, DC REVERSE VOLTAGE (VOLTS)
o
R
0.4
, REVERSE VOLTAGE (VOLTS)
= 10
10
10
I
15°C/W
pk
0.6
T
/I
T
J
o
J
= 85°C
= 5
= 25°C
0.8
15
15
I
20°C/W
pk
/I
o
1.0
= p
25°C/W
20
20
SQUARE
J
WAVE
= T
1.2
R
tja
Jmax
= 10°C/W
25
35°C/W
25
− r(t)Pr,
1.4
dc
1.6
30
30

Related parts for MBRM130LT1G