MBR160G ON Semiconductor, MBR160G Datasheet

MBR160G

Manufacturer Part Number

MBR160G

Description

DIODE SCHOTTKY 1A 60V DO-41

Manufacturer

ON Semiconductor

Datasheets

1.MBR160RLG.pdf (5 pages)

2.MBR160G.pdf (4 pages)

Specifications of MBR160G

Voltage - Forward (vf) (max) @ If

750mV @ 1A

Voltage - Dc Reverse (vr) (max)

60V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

500µA @ 60V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

DO-204AL, DO-41, Axial

Product

Schottky Diodes

Peak Reverse Voltage

60 V

Forward Continuous Current

1 A @ Ta=55C

Max Surge Current

25 A

Configuration

Single

Forward Voltage Drop

1 V @ 3 A

Maximum Reverse Leakage Current

500 uA

Operating Temperature Range

- 65 C to + 150 C

Mounting Style

Through Hole

Current, Forward

1 A

Current, Reverse

5 mA

Current, Surge

25 A

Package Type

DO-41

Primary Type

Schottky Barrier

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-65 to +150 °C

Voltage, Forward

1 V

Voltage, Reverse

60 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MBR160G
MBR160GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR160G

Manufacturer:

Quantity:

3 000

Current page: 1 of 5
Download datasheet (68Kb)

MBR150, MBR160

Axial Lead Rectifiers

large area metal−to−silicon power diode. State−of−the−art geometry

features epitaxial construction with oxide passivation and metal

overlap contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

•

Mechanical Characteristics:

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

June, 2006 − Rev. 8

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Forward Current (Note 1)

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz, T

Operating and Storage Junction Temperature

Range (Reverse Voltage Applied)

Thermal Resistance, Junction−to−Ambient

The MBR150/160 series employs the Schottky Barrier principle in a

Leads are Readily Solderable

260°C Max. for 10 Seconds

Low Reverse Current

Low Stored Charge, Majority Carrier Conduction

Low Power Loss/High Efficiency

Highly Stable Oxide Passivated Junction

These are Pb−Free Devices*

Case: Epoxy, Molded

Weight: 0.4 Gram (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

Lead Temperature for Soldering Purposes:

Polarity: Cathode Indicated by Polarity Band

qJA

R(equiv)

= 80°C/W, P.C. Board Mounting, T

v 0.2 V

Characteristic

(dc), T

Rating

MBR160 is a Preferred Device

= 90°C,

= 70°C)

(Notes 1 and 2)

MBR150

MBR160

MBR150

MBR160

= 55°C)

Symbol

R(RMS)

RWM

FSM

RRM

, T

qJA

stg

(for one

− 65 to

Value

cycle)

+150

Max

1.0

°C/W

Unit

°C

1.0 AMPERE − 50 AND 60 VOLTS

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

(Note: Microdot may be in either location)

SCHOTTKY BARRIER

MBR1x0 = Device Code

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

RECTIFIERS

= Assembly Location

= Year

= Work Week

= Pb−Free Package

x = 5 or 6

YYWW G

MBR1x0

Publication Order Number:

AXIAL LEAD

CASE 59

STYLE 1

DO−41

MBR150/D

Related parts for MBR160G

MBR160G Summary of contents

Page 1

... Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Maximum Instantaneous Forward Voltage (Note Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 25° ...

Page 3

BOTH LEADS TO HEATSINK, 80 EQUAL LENGTH 70 60 MAXIMUM 1/8 1/4 3/8 1/2 L, LEAD LENGTH (INCHES) ...

Page 4

... ORDERING INFORMATION Device MBR150 MBR150G MBR150RL MBR150RLG MBR160 MBR160G MBR160RL MBR160RLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. MBR150, MBR160 (Subscripts A and K refer to anode and cathode sides, respectively ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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