MA2SD3200L Panasonic - SSG, MA2SD3200L Datasheet
MA2SD3200L
Manufacturer Part Number
MA2SD3200L
Description
DIODE SCHOTTKY 30V200MA SSMINI2P
Manufacturer
Panasonic - SSG
Specifications of MA2SD3200L
Voltage - Forward (vf) (max) @ If
560mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
2ns
Capacitance @ Vr, F
25pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SS Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA2SD32
MA2SD3200LTR
MA2SD3200LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA2SD3200L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
MA2SD3200L+
Manufacturer:
PANAS0NIC
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
For super high speed switching
■ Features
■ Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: October 2003
• I
• Small reverse current: I
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current
Forward voltage
Terminal capacitance
Reverse recovery time
F(AV)
Pulse Generator
(PG-10N)
R
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 250 MHz
4. * : t
s
= 50 Ω
and the leakage of current from the operating equipment.
= 200 mA rectification is possible.
Parameter
rr
Parameter
measurement circuit
*
*
R
< 5 µA (at V
Bias Application Unit (N-50BU)
Symbol
V
I
I
F(AV)
T
I
V
FSM
RRM
T
A
FM
stg
R
a
j
Symbol
= 25°C ± 3°C
I
I
V
C
t
a
R1
R2
rr
R
F
t
= 25°C
= 30 V)
−55 to +125
Rating
200
300
125
30
30
1
V
V
I
V
I
I
F
F
rr
R
R
R
= 200 mA
= I
= 10 mA, R
SKH00132AED
= 10 V
= 30 V
= 0 V, f = 1 MHz
R
= 100 mA
Unit
mA
mA
°C
°C
V
V
A
Conditions
L
Wave Form
Analyzer
(SAS-8130)
R
= 100 Ω
i
= 50 Ω
Marking Symbol: 8H
V
R
5˚
t
r
0.80
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
+0.05
–0.03
t
p
1
2
0.30
Min
±0.05
t
0.01
0.49
Typ
25
2
±0.01
I
F
SSMini2-F1 Package
I
I
R
Output Pulse
F
R
0.60
L
= 100 mA
= 100 mA
= 100 Ω
Max
0.56
0.5
+0.05
–0.03
5
t
I
1: Anode
2: Cathode
rr
rr
0
= 10 mA
+0
–0.05
0.12
Unit: mm
Unit
+0.05
–0.02
µA
t
pF
ns
V
1
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