1N5406G ON Semiconductor, 1N5406G Datasheet - Page 2
![DIODE STD REC 3A 600V DO-201AD](/photos/5/37/53773/1n5406g_sml.jpg)
1N5406G
Manufacturer Part Number
1N5406G
Description
DIODE STD REC 3A 600V DO-201AD
Manufacturer
ON Semiconductor
Specifications of 1N5406G
Voltage - Forward (vf) (max) @ If
1V @ 3A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
10µA @ 600V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1 V
Forward Continuous Current
3 A
Max Surge Current
200 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Current, Forward
3 A
Current, Reverse
50 μA
Current, Surge
200 A
Package Type
Plastic Case
Primary Type
Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
1 V
Voltage, Reverse
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5406GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5406G
Manufacturer:
LRC/乐山
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Ratings at 25°C ambient temperature unless otherwise specified.
60 Hz resistive or inductive loads.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Non−repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non−repetitive Peak Surge Current
Operating and Storage Junction
Thermal Resistance, Junction−to−Ambient (PC Board Mount, 1/2 in. Leads)
Forward Voltage (I
Reverse Current (Rated DC Voltage)
Working Peak Reverse Voltage
DC Blocking Voltage
(Single Phase Resistive Load,
1/2 in. Leads, T
(8 ms Single Half−Sine−Wave)
Temperature Range
T
T
A
A
= 25°C
= 100°C
Rating
L
F
= 105°C)
= 3.0 A, T
A
= 25°C)
Characteristic
Characteristic
Symbol
V
V
V
I
T
RWM
FSM
V
RRM
RSM
T
I
stg
O
R
J
1N5400
100
50
http://onsemi.com
1N5401
100
200
2
1N5402
200
300
200 (one cycle)
− 65 to +150
− 65 to +175
Symbol
Symbol
1N5404
R
400
525
v
3.0
I
qJA
R
F
1N5406
600
800
Min
−
−
−
1N5407
1000
800
Typ
Typ
53
−
−
−
1N5408
1000
1200
Max
1.0
10
50
°C/W
Unit
Unit
Unit
mA
°C
V
V
A
A
V