MBRS4201T3G ON Semiconductor, MBRS4201T3G Datasheet - Page 3

• Manufacturer Part Number: MBRS4201T3G
• Description: DIODE SCHOTTKY 4A 200V SMC
• Manufacturer: ON Semiconductor

Specifications of MBRS4201T3G

• Voltage - Forward (vf) (max) @ If: 860mV @ 4A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Schottky Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 4 A
• Max Surge Current: 100 A
• Configuration: Single
• Recovery Time: 35 ns
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 0.35 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 4A
• Forward Voltage Vf Max: 860mV
• Reverse Recovery Time Trr Max: 35ns
• Forward Surge Current Ifsm Max: 100A
• Diode Case Style: SMC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS4201T3G; MBRS4201T3GOSTR; Q2726533

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6
5
4
3
2
1
0
0
20
T
L
Figure 6. Derating Curve
40
, LEAD TEMPERATURE (°C)
60
SQUAREWAVE
80
1000
100
−0.5
−1.0
−1.5
−2.0
−2.5
10
2.5
2.0
1.5
1.0
0.5
1
Figure 8. Reverse Recovery Time* (t
0
0
100
DC
20
120
40
Figure 5. Typical Capacitance
MBRS4201
V
140 160
R
http://onsemi.com
60
, REVERSE VOLTAGE (V)
T, TIME (10 ns/div)
80
3
100 120 140 160 180 200
200 V Ultrafast
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
RR
) at 1255C
1
I
O
, AVERAGE FORWARD CURRENT
Figure 7. Power Dissipation
SQUAREWAVE
2
ON Semiconductor MBRS4201
eliminates reverse recovery
oscillations present in Ultrafast
devices in the market, particularly at
hot temperatures.
*Test Conditions:
I
V
F
R
= 1 A, d
= 30 V
3
I
/d
DC
T
4
= 100 A/ms,
5
6