MBR3100G ON Semiconductor, MBR3100G Datasheet - Page 2
![DIODE SCHOTTKY 3A 100V DO-201AD](/photos/5/37/53780/mbr3100g_sml.jpg)
MBR3100G
Manufacturer Part Number
MBR3100G
Description
DIODE SCHOTTKY 3A 100V DO-201AD
Manufacturer
ON Semiconductor
Specifications of MBR3100G
Voltage - Forward (vf) (max) @ If
790mV @ 3A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
600µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
3 A @ Ta=100C
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.79 V
Maximum Reverse Leakage Current
20000 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Current, Forward
3 A
Current, Reverse
20 mA
Current, Surge
150 A
Package Type
DO-201AD
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.79 V
Voltage, Reverse
100 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR3100G
MBR3100GOS
MBR3100GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR3100G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
0.05
(i
(i
T
T
0.5
0.3
0.2
0.1
50
30
20
10
F
F
L
L
8
7
6
5
4
3
2
1
0
5
3
2
1
= 3.0 Amps, T
= 3.0 Amps, T
= 25°C
= 100°C
0.1
20
T
0.2
J
Figure 1. Typical Forward Voltage
= 150°C
40
100°C
0.3 0.4 0.5
v
(Mounting Method #3 per Note 3)
25°C
F,
SQUARE
L
L
INSTANTANEOUS VOLTAGE (VOLTS)
T
WAVE
= 25°C)
= 100°C)
A
Figure 3. Current Derating
60
, AMBIENT TEMPERATURE (°C)
80
0.6
100
0.7
dc
0.8 0.9
Characteristic
Characteristic
120
(T
L
= 25°C unless otherwise noted)
140
1
1.1
160
1.2 1.3
http://onsemi.com
180
MBR3100
2
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
0.0005
0.0002
0.0001
0.005
0.002
0.001
0.05
0.02
0.01
0.5
0.2
0.1
3.5
2.5
1.5
0.5
1
4
3
2
1
0
0
10
T
I
J
F (AV)
125°C
100°C
= 150°C
1.0
25°C
20
Figure 2. Typical Reverse Current*
, AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
V
30
R
REVERSE VOLTAGE (VOLTS)
Symbol
Symbol
2.0
R
40
v
i
qJA
R
F
50
SQUARE
R
WAVE
is sufficient below rated V
3.0
60
Max
Max
0.79
0.69
0.6
28
20
70
4.0
80
dc
90
°C/W
Unit
Unit
mA
V
100
5.0
R
.